Information

Hisense R & D Center

Release time:

2024-06-06 16:36

Hisense's new R & D center is located in Laoshan District, Qingdao, with a total construction area of 443000 square meters. It is an "incubation pool" built by Hisense for technical and R & D personnel ". At the same time, it is also the "innovation center" of Qingdao, where the Science and Technology Pioneer Park and the Silicon Valley Center are all located.

The project plans to build a number of research and development institutions and companies, including Hisense multimedia research and development center, optical communication technology research and development center, intelligent transportation technology research and development center, intelligent commercial equipment research and development center, user experience center, industrial design center, etc, at the same time, there are a number of national science and technology platforms, such as national technology center, State Key Laboratory of digital multimedia technology, national urban road traffic equipment intelligent engineering technology research center, national postdoctoral research workstation, national local joint engineering laboratory of optical communication devices, and national certified measurement and testing station.

Such a high-end technology research and development base for the building requirements are also high, environmental protection, green, durable has become the inevitable requirement of its waterproof system construction. Founder, the developer, took a fancy to the professionalism and product excellence that Hongyuan Waterproof Project has always adhered to, and chose Hongyuan as its partner. Hongyuan's expert team has designed a combination of Hongyuan SBS elastomer modified asphalt waterproofing membrane times to elastomer modified asphalt chemical root-resistant waterproof membrane polyurethane coating for Hisense R & D Center. The organic combination of waterproof and environmental protection, carefully build environmental protection waterproof project.